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Freescale Semiconductor Technical Data
MRF6P27160H Rev. 0, 1/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 900 mA, Pout = 35 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 14.6 dB Drain Efficiency -- 22.6% ACPR @ 885 kHz Offset -- - 47.8 dBc @ 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched, Controlled Q, for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P27160HR6
2700 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +12 603 3.45 - 65 to +150 200 160 Unit Vdc Vdc W W/C C C W
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 160 W CW Case Temperature 71C, 35 W CW Symbol RJC Value (1,2) 0.29 0.31 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6P27160HR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Volta (VDS = 10 Vdc, ID = 250 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 900 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.8 -- pF VGS(th) VGS(Q) VDS(on) gfs 1 2 -- -- 2 2.8 0.21 5.3 3 4 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2 x 900 mA, Pout = 35 W Avg. N - CDMA, f = 2630 and 2660 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D ACPR IRL 13 20 -- -- 14.6 22.6 - 47.8 - 13 16 -- - 45 -9 dB % dBc dB
MRF6P27160HR6 2 RF Device Data Freescale Semiconductor
B1 VBIAS + C7 + C6 C5 C4
R1 C3
Z35
Z37 + C15 C16 C17 C18 + C19 Z31 C13 RF OUTPUT Z32 Z33 DUT VSUPPLY
Z17 Z19 Z21 Z23 Z25 Z27 Z29
Z3 RF INPUT Z1 Z2 C2 C1
Z5
Z7
Z9
Z11
Z13
Z15
Z4
Z6
Z8
Z10
Z12
Z14
Z16 Z18 Z20 Z22 Z24 Z26 Z28 C14 B2 VBIAS + + C10 C9 C8 C20 C21 C22 R2 C12 C11 Z34 Z36 + C23 + C24
Z30
VSUPPLY
Z1 Z2, Z31 Z3, Z30 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19
1.011 x 0.139 Microstrip 0.150 x 0.070 Microstrip 1.500 x 0.086 Microstrip 0.050 x 0.230 Microstrip 0.170 x 0.080 Microstrip 0.144 x 0.340 Microstrip 0.400 x 0.210 Microstrip 0.280 x 0.710 Microstrip 0.461 x 0.490 Microstrip 0.357 x 0.766 Microstrip 0.284 x 0.415 Microstrip
Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z32 Z33 Z34, Z35 Z36, Z37 PCB
0.160 x 0.760 Microstrip 0.240 x 0.150 Microstrip 0.170 x 0.420 Microstrip 0.260 x 0.080 Microstrip 0.040 x 0.258 Microstrip 0.622 x 0.139 Microstrip 0.346 x 0.081 Microstrip 0.801 x 0.050 Microstrip 0.460 x 0.095 Microstrip Arlon GX - 0300 - 5022, 0.030, r = 2.5
Figure 1. MRF6P27160HR6 Test Circuit Schematic
Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values
Part B1, B2 C1, C2 C3, C8, C15, C20 C4, C9 C5, C10 C6, C11 C7, C12 C13, C14 C16, C17, C21, C22 C18, C23 C19, C24 R1, R2 Description Beads, Surface Mount 5.6 pF Chip Capacitors 3.3 pF Chip Capacitors 0.01 F Chip Capacitors (1825) 2.2 F, 50 V Chip Capacitors (1825) 22 F, 25 V Tantalum Chip Capacitors 47 F, 16 V Tantalum Chip Capacitors 4.3 pF Chip Capacitors 10 F, 50 V Chip Capacitors (2220) 47 F, 50 V Electrolytic Capacitors 330 F, 63 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resistors (1210) Part Number 2743019447 100B5R6CP500X 100B3R3CP500X C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AS 100B4R3CP500X GRM55DR61H106KA88B MVK50VC47RM8X10TP NACZF331M63V ERJ - 14YJ3R3U Manufacturer Fair - Rite ATC ATC Kemet Kemet Panasonic TE Series Kemet ATC Murata Nippon Nippon Dale/Vishay
MRF6P27160HR6 RF Device Data Freescale Semiconductor 3
C17 C7 C6 B1 R1 C3 C5* C4* C15 C16 C18
+ C19
C1
C13
CUT OUT AREA
C2
C14 MRF6P27160H Rev 5 C20 C21 C24
C10*
C8 B2 C12 C11 R2 C22 C23
*Stacked
Figure 2. MRF6P27160HR6 Test Circuit Component Layout
MRF6P27160HR6 4 RF Device Data Freescale Semiconductor
+
-
C9*
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -10 -11 -12 -13 -14 -15 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -10 -11 -12 -13 -14 -15 -16 IRL, INPUT RETURN LOSS (dB) 2700 mA IDQ = 900 mA -40 IRL, INPUT RETURN LOSS (dB) 16 15.8 15.6 Gps, POWER GAIN (dB) 15.4 15.2 VDD = 28 Vdc, Pout = 35 W (Avg.), 15 IDQ = 1800 mA, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 14.8 14.6 14.4 14.2 Gps IRL D 24 23 22 21 20 -40 -45 ACPR ALT1 -50 -55 -60
-65 14 2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700 f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 35 Watts Avg.
15.2 15.1 15 Gps, POWER GAIN (dB) 14.9 14.8 14.7 14.6 14.5 14.4 14.3 14.2 ACPR ALT1 Gps D
35 VDD = 28 Vdc, Pout = 70 W (Avg.), 34 IDQ = 1800 mA, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 33 32 31 30 -30 -35 -40 -45 -50
IRL
-55 14.1 -60 14 2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700 f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 70 Watts Avg.
17 2250 mA 1800 mA 15 1350 mA 14 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2700 mA 16 Gps, POWER GAIN (dB)
-20
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing
-30
-50 1800 mA -60 0.1 1 1350 mA 10
2250 mA
13 12 0.1
900 mA VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing 1 10 100 1000
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6P27160HR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-10 VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA Two-Tone Measurements, Center Frequency = 2645 MHz Pout, OUTPUT POWER (dBm) -20
58 Ideal 57 56 55 54 53 52 51 50 1 10 100 34 35 36 37 38 39 40 41 42 TWO-TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1800 mA Pulsed CW, 8 sec(on), 1 msec(off) Center Frequency = 2645 MHz P1dB = 53.64 dBm (231.15 W) Actual P3dB = 54.32 dBm (270.33 W)
-30
3rd Order 5th Order
-40 -50
7th Order -60 0.1
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 Gps 15 10 VDD = 28 Vdc, IDQ = 1800 mA, f = 2645 MHz Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth, Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
Figure 8. Pulse CW Output Power versus Input Power
-35 -40 -45 -50 -55 -60 ALT1 ACPR (dBc), ALT1 (dBc)
5 0 1
D
ACPR
-65 -70 100
10 Pout, OUTPUT POWER (WATTS) AVG. W-CDMA
Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
20 Gps 15 Gps, POWER GAIN (dB) 40 50 D, DRAIN EFFICIENCY (%) 16 15 Gps, POWER GAIN (dB) 14 13 12 20 V 11 VDD = 16 V 0 400 10 0 60 120 180 240 300 Pout, OUTPUT POWER (WATTS) CW 28 V 24 V IDQ = 1800 mA f = 2645 MHz
10
30
32 V
5 VDD = 28 Vdc IDQ = 1800 mA f = 2645 MHz 1 10 100
20
0 D -5 0.1
10
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6P27160HR6 6
Figure 11. Power Gain versus Output Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 -3.6 -2.9 -2.2
1.2288 MHz Channel BW
-ACPR @ 30 kHz Integrated BW
+ACPR @ 30 kHz Integrated BW
Figure 12. Single - Carrier CCDF N - CDMA
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 13. Single - Carrier N - CDMA Spectrum
1010 MTTF FACTOR (HOURS X AMPS2)
109
108
107 90
100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MRF6P27160HR6 RF Device Data Freescale Semiconductor 7
Zo = 10
f = 2600 MHz Zload Zsource f = 2700 MHz f = 2700 MHz f = 2600 MHz
VDD = 28 Vdc, IDQ = 1800 mA, Pout = 35 W Avg. f MHz 2600 2610 2620 2630 2640 2645 2650 2660 2670 2680 2690 2700 Zsource 6.90 + j0.61 6.85 + j0.63 6.76 + j0.59 6.50 + j0.59 6.13 + j0.56 5.95 + j0.69 5.81 + j0.83 5.61 + j1.15 5.69 + j1.48 5.91 + j1.67 6.12 + j1.68 6.17 + j1.60 Zload 5.24 + j2.46 5.69 + j2.04 5.71 + j1.59 5.62 + j1.48 5.45 + j1.42 5.38 + j1.49 5.31 + j1.58 5.24 + j1.81 5.45 + j2.09 5.84 + j2.22 6.22 + j2.12 6.49 + j1.92
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 15. Series Equivalent Source and Load Impedance MRF6P27160HR6 8 RF Device Data Freescale Semiconductor
NOTES
MRF6P27160HR6 RF Device Data Freescale Semiconductor 9
NOTES
MRF6P27160HR6 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X
Q bbb
M
A
A G4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3 4X
4
K aaa
M
4X
(FLANGE)
B
D
TA
M
B
M
ccc ccc
M
M
TA
(LID)
M
B
M
TA N (LID)
M
B
M
R
H C
F
E
PIN 5 M (INSULATOR) bbb
M
T
SEATING PLANE
(INSULATOR)
S
bbb
M
TA
M
B
M
TA
M
B
M
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375D - 05 ISSUE D NI - 1230
MRF6P27160HR6 RF Device Data Freescale Semiconductor 11
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MRF6P27160HR6 12
Document Number: MRF6P27160H Rev. 0, 1/2005
RF Device Data Freescale Semiconductor

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